features benefits ?multiple quantum well (mqw) dfb laser ?4 channels video/data loading ?wide operating temperature without tec ?low distortion characteristics ?built-in optical isolator ?5db link loss ?coaxial module with vertical flange applications this dfb laser module is intended for application in return (reverse) path analog video/data. description the FLD3F12JL is a dfb laser diode for return path analog video/data applications. it has a 2.0 to 4.0mw optical power range*. it is specified with 4 channels signal loading and has excellent cso and ctb performance. it is packaged in a small coaxial coolerless type module with built-in isolator and monitor photodiode. this device has a wide operating temperature of -25 to +85? without thermo- electric cooler (tec). parameter optical output power forward current (ld) reverse voltage (ld) photodiode reverse voltage photodiode forward current soldering temperature (t<10sec., d>2.5mm) storage temperature operating case temperature symbol pf max 8.0 150 2 20 2 260 -40 to +90 -25 to +85 v v ma c c c mw ma if max vr max vdr max idf max t solder t stg t op storage humidity (note 1) 85 % x stg operating humidity (note 1) 85 % x op ratings unit absolute maximum ratings (t c =25 c) note 1: storage or operating within 500 hours maximum. 1 edition 1.0 december 1999 1,310nm mqw-dfb return path laser FLD3F12JL
2 1,310nm mqw-dfb return path laser FLD3F12JL edition 1.0 december 1999 parameter test conditions symbol unit optical and electrical characteristics (t c =-25 to +85 c, unless otherwise specified) limits min. max. peak wavelength cw, i f =i op p nm 1,290 1,330 - typ. fiber output power cw, i f =i op p f mw 2.0 4.0 - threshold current cw i th ma 260 - forward voltage cw, i f =i op v f v - 1.5 1.2 slope efficiency cw, i f =i op s w/ma 40 250 - slope efficiency at tc=25 c cw, i f =i op , tc=25 c s 25 w/ma 60 200 120 slope efficiency ratio s(tc)/s25 rts - 0.5 1.4 - sidemode suppression ratio cw, i f =i op ssr db 30 - - relative intensity noise note (2) rin db/hz - -150 - monitor current cw, i f =iop, vdr=5v im ma 0.05 2.0 - monitor dark current vdr=5v id na - 500 1 tracking error note (4) te db -1.0 +1.0 - frequency flatness note (3) -db -0.5 +0.5 - note (1): i f =i op , omi=7%/ch, 4ch(f=7.25mhz to 25.25mhz) note (2): cw, i f =i op , f=5mhz to 300mhz note (3): i f =i op , f=5mhz to 300mhz note (4): cw, im-apc(i f =i op @tc=+25 c), tc=-25 c to +85 c note (1) cso dbc - -55 - composite second order note (1) ctb dbc - -60 - composite triple beat
3 1,310nm mqw-dfb return path laser FLD3F12JL edition 1.0 december 1999 fig. 3 temperature dependence of threshold current fig. 4 temperature dependence of slope efficiency case temperature, tc ( c) threshold current, ith (ma) 10 1 100 -20 0 20 40 60 80 case temperature, tc ( c) slope efficiency, s ( w/ma) 150 200 250 50 100 -20 0 20 40 60 80 fig. 1 forward current vs output power forward current, if (ma) output power, pf (mw) 0 3 2 1 4 020406080 tc=+85 c +25 c -25 c 100 fig. 2 forward voltage vs forward current forward voltage, vf (v) forward current, if (ma) 0 20 40 80 60 0 0.5 1.0 1.5 2.0 tc=+25 c
4 1,310nm mqw-dfb return path laser FLD3F12JL edition 1.0 december 1999 fig. 5 tracking characteristics case temperature, tc ( c) tracking error (db) 0 -2 2 im = constant (@tc=25 c) -1 -1 -25 0 25 40 60 80 85 fig. 6 cso vs. output power fig. 7 ctb vs. output power optical output power, pf (mw) optical output power, pf (mw) cso at 6mhz (dbc) ctb at 13mhz (dbc) -60 -70 -50 omi = 7%/ch, 4ch omi = 7%/ch, 4ch -65 -55 -70 -80 -60 -75 -65 234 234 tc=+85 c +25 c +85 c +25 c -25 c tc=-25 c
5 notes 1,310nm mqw-dfb return path laser FLD3F12JL edition 1.0 december 1999
6 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: fujitsu compound semiconductor, inc. americas & r.o.w. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fme, qdd fujitsu microelectronics europe gmbh quantum devices division network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 fujitsu quantum devices singapore pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-23770226 fax: +852-23763269 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. ? 2000 fujitsu compound semiconductor, inc. printed in u.s.a. fcsi0200m200 fujitsu quantum devices limited global business division global sales support department shinjuku daiichiseimei building, 2-7-1 nishishinjuku, shinjuku-ku, tokyo, 163-0721, japan tel: +81-3-5322-3356 fax: +81-3-5322-3398 1,310nm mqw-dfb return path laser FLD3F12JL 1 4 2 3 case ld pd 0.9 0.1 7.1 0.1 6.3 max 2 3 4 1 7.4 0.2 2.5 0.1 4- 0.45 0.1 lead rotation 10 p.c.d.2.54 12 0.15 16.00 0.15 0.3 4-c1 10 min. 32 max. 800 min. 6.7 0.2 ?l?package unit: mm
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